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| Datasheet File OCR Text: |
| PROCESS Power Transistor PNP - Darlington Chip CP547 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 290 PRINCIPAL DEVICE TYPES MJ11011 2N6285 MJ11013 2N6286 MJ11015 2N6287 EPITAXIAL BASE 195 X 195 MILS 12 MILS 29 X 29 MILS 61 X 35 MILS AI - 30,000A Ti/Ni/Au - 6,000A BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (1-August 2002) Central TM PROCESS CP547 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (1-August 2002) |
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